• DocumentCode
    288184
  • Title

    Development of a self protected light triggered thyristor

  • Author

    Aliwell, R.W. ; Crees, D.E.

  • Author_Institution
    GEC Plessey Semicond., Lincoln, UK
  • fYear
    1994
  • fDate
    34449
  • Firstpage
    42552
  • Lastpage
    42554
  • Abstract
    The next generation of HVDC valves are likely to use Light Triggered Thyristors (LTTs) to eliminate firing electronics close to the thyristor. Maximum cost and system benefits from the use of these LTTs will be achieved by also making them self protecting thereby removing the remaining protection electronics from the high voltage valve. This paper describes the development of a light triggered thyristor which self protects when subjected to voltages greater than its design capability (Vbo protection) and against forward dV/dt, particularly during the critical turn-off period (Forward Recovery or FRP Protection). Modern converter thyristors employ amplifying gate structures to achieve fast and efficient turn-on. The cross sectional structure of a light triggered thyristor is described and the mechanism by which the amplifying gate turns the device on when exposed to a pulse of laser light is explained. The amplifying gate is also the route by which safe turn-on is achieved in the new Vbo and FRP selfprotection structures to be described
  • Keywords
    photothyristors; protection; thyristor applications; HVDC valves; amplifying gate; critical turn-off period; forward recovery protection; high voltage valve; self protected light triggered thyristor;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Devices, Drive Circuits and Protection, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    369822