Title :
Design of anode and gate circuits for GTOs
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
Gate Turn Off Thyristors (GTOs) may be applied to control currents of 4000 A at 4.5 kV. In common with other latching power devices, they offer low gate drive requirements in the on-state. In addition they may be turned off from the gate. A typical GTO application requires the use of parallel Resistor-Capacitor-Diode (RCD) snubbers to aid the turn-off switching performance. At the highest current levels, the behaviour of the circuit is heavily influenced by the stray inductances found in the circuit. By accurate modelling of the GTO in the circuit is is possible to identify the important stray components, the relevant features of the other components and quantify their influence
Keywords :
semiconductor device models; snubbers; thyristors; 4.5 kV; 4000 A; GTOs; gate drive requirements; gate turn off thyristors; latching power devices; modelling; parallel resistor-capacitor-diode snubbers; stray inductances; turn-off switching performance;
Conference_Titel :
Devices, Drive Circuits and Protection, IEE Colloquium on
Conference_Location :
London
