DocumentCode :
2881854
Title :
A 10 µ W standby power 256K CMOS SRAM
Author :
Kobayashi, Yoshiyuki ; Eguchi, H. ; Kudoh, O. ; Hara, Tenshi ; Ooka, H. ; Sasaki, Innan ; Andoh, Michinori ; Tameda, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
60
Lastpage :
61
Abstract :
This paper will report on a 55ns 256K CMOS SRAM that utilizes optimized poly load resistors, buried isolation and Ti polycide to achieve 10μW standby power in a 40.7mm2die.
Keywords :
Circuits; Electronics packaging; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156780
Filename :
1156780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2881854
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