Title :
Technology Trends in Power Devices
Author :
Platzoeder, K. ; Tihanyi, J.
Author_Institution :
Siemens AG, Frankfurter Ring 152, 8000 Muenchen 46, West Germany
Abstract :
At switching powers below 10 kVA the classical bipolar devices are attacked by MOSFETs. Their main advantages are higher switching speed and less expensive drive circuits. In the power range up to 100 kVA large bipolar transistors with votlages of 400 - 1000 V are of growing interest. On the other hand, asymmetric thyristors (ASCR) and gate turn-off thyristors (GTO) can also reduce weight and volume of the equipment. Above 100 kVA thyristors still dominate due to their unsurpassed current and voltage capability.
Keywords :
Baseband; Communication system control; Control systems; Frequency conversion; Low pass filters; Power generation; Power harmonic filters; Read only memory; Sampling methods; Telephony;
Conference_Titel :
Telecommunications Energy Conference, 1982. INTELEC 1982. International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/INTLEC.1982.4793691
