Open cell technology paves the way to single chip MOSFETs, IGBTs, and MCTs for very high power applications

Open single-cell technology is currently employed to fabricate power MOSEET and IGBT chips in sizes from (5.05 mmx5.16 mm) to (14.86 mmx18.75 mm). The largest chip yields an IGBT of 200 A at 1000 V, or 300 A at 600 V. As a MOSFET it gives 36 A at 1000 V. At present, these monolithic MOS-controlled chips are the largest produced commercially today. While the original process was optimized for the production of 500 V or greater devices, more recent developments have extended its validity downwards to 100 V. Extension upwards to 1200 V and above is currently underway. The nature of the process, in particular the topside topology, is also conducive to the fabrication of very large diameter high voltage MCTs. Such chips could be encapsulated in double-side cooled press-pack housings for optimum thermal management and silicon utilization