DocumentCode :
2881973
Title :
A 480 × 400 element image sensor with a charge sweep device
Author :
Kimata, M. ; Denda, M. ; Yutani, Naoki ; Tsubouchi, N.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
100
Lastpage :
101
Abstract :
A description of a vertical charge transfer that makes it possible to narrow the channel width to the size of the lithographic limit without degradation of charge handling capacity of the vertical charge transfer will be presented. The array size of the imager sensor with a 1/2" format is 480(V)×400(H) and the pixel size is 10\\times 16\\mu ^{2} .
Keywords :
Charge coupled devices; Charge transfer; Image sensors; Photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156786
Filename :
1156786
Link To Document :
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