DocumentCode :
2882033
Title :
W-band on wafer measurement of active and passive devices
Author :
Edgar, D.L. ; Elgaid, K. ; Williamson, F. ; Ross, A. ; McLelland, H. ; Ferguson, Stacey ; Doherty, F. ; Thayne, I.G. ; Taylor, M.R.S. ; Beaumont, S.P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
1999
fDate :
1999
Firstpage :
42401
Lastpage :
42406
Abstract :
In this paper we have presented a study of the effect of back-thinning standard CPW wafers and the influence on measured W-band performance. Improvements in measured insertion loss and substrate cross-talk have been observed, and a study of the effect of a quartz spacer layer has been made. Additionally, the improvement in measured performance of active devices after wafer thinning has also been shown, and further progress is expected in this area
Keywords :
millimetre wave measurement; CPW wafer thinning; W-band on-wafer measurement; active device; insertion loss; passive device; quartz spacer layer; substrate crosstalk;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990025
Filename :
771828
Link To Document :
بازگشت