Title :
A 95ns 256k CMOS EPROM
Author :
Yoshizaki, Kayoko ; Takahashi, Hiroki ; Kamigaki, Y. ; Yasui, T. ; Komori, Kenji ; Katto, H.
Author_Institution :
Hitachi Musashi Works, Tokyo, Japan
Abstract :
A CMOS EPROM with address access time of 95ns and power dissipation of 12mW at 1MHz cycle time will be discussed. Average programming time is 0.5ms/byte with programming voltage range of 11V-14V. Active operating power is 12mW.
Keywords :
EPROM; Fabrication; Leakage current; MOS devices; Switching circuits; Variable structure systems; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156795
