GaAs power MMICs for X-band radar applications

This paper describes the design of some MMIC components for use in X-band radar applications. In particular, a highly linear VCO suitable for FMCW radar applications is described together with a high gain medium power amplifier and a high packing density power amplifier. A high performance SPDT switch is also explained. The ICs were fabricated upon ion implanted material, which was preferred over alternative methods of material preparation due to its greater uniformity over a 3" wafer diameter. In order to maximise the dynamic range of the device, and hence its power generation capacity, a p-type species was deeply implanted, thereby sharpening the back interface of the doping profile. The dose of the p-type species was carefully calibrated in order to avoid undesirable effects which can arise if a buried p-layer structure is formed