Title :
History of the GaAs FET at Caswell (1964-1985)
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
The author presents a brief history of research and development of the GaAs MESFET at Caswell. Topics discussed include operating frequency problems, power MESFETs and X-band GaAs ICs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; history; microwave field effect transistors; power MESFET; Caswell; GaAs; GaAs MESFET; X-band GaAs ICs; history; operating frequency; power MESFETs; research and development;
Conference_Titel :
Modelling, Design and Application of MMIC's, IEE Colloquium on
Conference_Location :
London
