Title :
A comparison of three wide FETs configured as controllable couplers
Author :
Cryan, M.J. ; Shepherd, P.R. ; Pennock, S.R.
Author_Institution :
Sch. of Electron. & Electr. Eng., Bath Univ., UK
Abstract :
Measured and modelled six port S-parameters for three wide FETs are presented from O.1-20 GHz. Directional coupling is observed between source and drain lines, the directivity of which is tunable by DC gate bias. Tunable directivities of greater than 20 dB from 8 to 12 GHz are predicted for the de-embedded device
Keywords :
S-parameters; directional couplers; field effect transistors; multiport networks; semiconductor device models; 0.1 to 20 GHz; DC gate bias; FETs; controllable couplers; directional coupling; drain lines; six port S-parameters; source lines; tunable directivities;
Conference_Titel :
Modelling, Design and Application of MMIC's, IEE Colloquium on
Conference_Location :
London
