A comparison of charge control modelling and experimental performance of pseudomorphic MODFETs

The authors compare the experimental measurements of the transconductance of planar-doped pseudomorphic MODFETs with the theoretical predictions obtained using a charge control model. The main goal of charge control modelling is to identify the gate voltage dependence of the electron accumulation in the channel region of the MODFET: from this a good indication of the transconductance performance of the device can be derived. The advantage of charge control modelling in this context is that it is less complicated than full- or quasi-2D modelling of the MODFET, and it allows the capacitive effects to be studied in isolation from the complication of transport issues. Good agreement between the theory and experiment has been obtained and their modelling studies show the importance of modelling accurately the shallow donor level in the planar doped region of the transistor