Power MOSFET for Switching Regulator

The power MOSFET has many superior characteristics compared with conventional power bipolar transistors. NEC has developed power MOSFETs for various applications such as for voltage ranges of between 30V to 1000V, and current ranges of 0.3A to 30A. In this paper, the results of studies on NEC´s power MOSFET are described. Two devices are introduced as particular examples, one is the 800V, 1¿ the other is the 60V, 13m¿, these are available for the switching regulator as switching and rectifying devices. A new concept of MOSFET´s being a low power loss and high speed rectifying device is presented here, in this case, a simple estimate of the redution of the new rectifing MOSFET is expected to be 2W in conparison with the Schottky diode which in 4W.