DocumentCode
2882634
Title
Temperature effects on the large signal transient response of long-wavelength MQW lasers
Author
Pereira, Jorge Manuel Torres
Author_Institution
Dept. of Electr. & Comput. Eng., Inst. Superior Tecnico, Lisbon, Portugal
Volume
2
fYear
1998
fDate
18-20 May 1998
Firstpage
1432
Abstract
In this paper we investigate the effect of temperature on the transient response of multiple quantum well (MQW) 1.3 μm InP-InGaAsP lasers of the Fabry-Perot type when the injection current changes by steps from zero to a value above threshold. For the structure under study the rate equations were numerically solved for each temperature taking into account the appropriate values of the maximum gain, the threshold current density and the photon and carrier lifetime, which change with temperature. As expected the carrier and photon transients change with temperature, their evolution depending on the current density values considered at each temperature. When the ratio between the current density and the threshold current density is kept constant we observe that for an increase of temperature there is an increase of the amplitude and frequency of the oscillations and a decrease of their relaxation time and turn-on delay time. However for a constant current density the increase of temperature can lead to opposite conclusions
Keywords
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor device models; 1.3 mum; Fabry-Perot type; InP-InGaAsP; InP-InGaAsP lasers; above threshold; carrier lifetime; current density; injection current; injection current change; large signal transient response; long-wavelength MQW lasers; maximum gain; multiple quantum well; photon lifetime; photon transients; rate equations; relaxation time; temperature effects; threshold current density; turn-on delay time; Charge carrier lifetime; Current density; Equations; Fabry-Perot; Laser transitions; Quantum well devices; Quantum well lasers; Temperature dependence; Threshold current; Transient response;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean
Conference_Location
Tel-Aviv
Print_ISBN
0-7803-3879-0
Type
conf
DOI
10.1109/MELCON.1998.699474
Filename
699474
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