Title :
Carrier dynamics in self-assembled quantum-dot materials and devices
Author_Institution :
Cardiff Univ., UK
Abstract :
This study presents an overview of recent measurements of the dephasing time and gain recovery dynamics in InGaAs/GaAs QD material and devices. Results indicate that the ultrafast gain recovery on a subpicosecond time scale measured at room temperature is related to the presence of several carriers in the excited states of the QD, i.e. to a multiexciton state with several available channels for relaxation.
Keywords :
III-V semiconductors; excited states; excitons; gallium arsenide; high-speed optical techniques; indium compounds; self-assembly; semiconductor devices; semiconductor quantum dots; 293 to 298 K; InGaAs-GaAs; carrier dynamics; dephasing time; excited states; gain recovery dynamics; multiexciton state; quantum-dot devices; quantum-dot materials; room temperature; self-assembled materials; subpicosecond time scale; ultrafast gain recovery; Atom optics; Gain measurement; High speed optical techniques; Indium gallium arsenide; Optical scattering; Particle scattering; Quantum dots; Temperature measurement; Time measurement; Ultrafast optics;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567174
