Title :
Transient spin-gratings of itinerant electrons in lightly-doped GaAs quantum wells
Author :
Carter, S.G. ; Chen, Z. ; Cundiff, S.T. ; Huntington, A.S. ; Coldren, L.A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO
Abstract :
Spin gratings lasting longer than the carrier lifetime are measured in lightly n-doped quantum wells. In a magnetic field, precession of the grating is observed, and diffusion rates are determined by varying the grating period.
Keywords :
III-V semiconductors; carrier lifetime; diffusion; electron-hole recombination; excitons; gallium arsenide; reflectivity; semiconductor quantum wells; spin dynamics; GaAs; carrier lifetime; carrier recombination; diffusion rates; itinerant electrons; lightly n-doped quantum wells; reflectivity; spin dynamics; transient spin-gratings; Electrons; Frequency; Gallium arsenide; Gratings; Magnetic field measurement; Optical pulse shaping; Optical pumping; Probes; Pulse modulation; Trions; (300.2570) Four-wave mixing; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628933
