DocumentCode
2882986
Title
Equilibrium and nonequilibrium gain modelling in semiconductor lasers
Author
Thranhardt, A. ; Becker, S. ; Koch, S.W. ; Hader, J. ; Moloney, J.V.
Author_Institution
Dept. of Phys., Philipps-Marburg Univ., Marburg, Germany
fYear
2005
fDate
12-17 June 2005
Firstpage
16
Abstract
This paper presents laser gain calculations for different material systems, like the metastable dilute nitride system GaInNAs/GaAs. These calculations show good agreement with experiment. On the other hand, nonequilibrium effects in different regimes as well as dependence of scattering times on structural parameters such as material composition and well width are also discussed.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; light scattering; metastable states; quantum well lasers; semiconductor device models; GaInNAs-GaAs; equilibrium gain modelling; laser gain calculations; material composition; metastable dilute nitride system; nonequilibrium effects; nonequilibrium gain modelling; quantum well width; scattering time dependence; semiconductor lasers; structural parameters; Equations; Laser modes; Laser theory; Mathematical model; Microscopy; Optical materials; Optical scattering; Particle scattering; Predictive models; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN
0-7803-8973-5
Type
conf
DOI
10.1109/EQEC.2005.1567189
Filename
1567189
Link To Document