DocumentCode :
2883003
Title :
High speed LSI technologies challenging the CMOS VLSI era
Author :
Greiling, P.
Author_Institution :
Hughes Research Labs., Malibu, CA, USA
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
234
Lastpage :
235
Abstract :
The dominant VLSI technology for the next decade will be CMOS. Emerging technologies such as GaAs FETs, AlGaAs high electron mobility transistors, AlGaAs heterojunction bipolar transistors and Si bipolar transistors are all attempting to demonstrate performance advantages and specialized applications for each technology . . . The panel will address the potential role of these niche technologies in a CMOS VLSI dominated era.
Keywords :
CMOS process; CMOS technology; Gallium arsenide; HEMTs; Integrated circuit technology; Large scale integration; Parallel processing; Silicon; Space technology; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156842
Filename :
1156842
Link To Document :
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