Title :
High speed LSI technologies challenging the CMOS VLSI era
Author_Institution :
Hughes Research Labs., Malibu, CA, USA
Abstract :
The dominant VLSI technology for the next decade will be CMOS. Emerging technologies such as GaAs FETs, AlGaAs high electron mobility transistors, AlGaAs heterojunction bipolar transistors and Si bipolar transistors are all attempting to demonstrate performance advantages and specialized applications for each technology . . . The panel will address the potential role of these niche technologies in a CMOS VLSI dominated era.
Keywords :
CMOS process; CMOS technology; Gallium arsenide; HEMTs; Integrated circuit technology; Large scale integration; Parallel processing; Silicon; Space technology; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156842