Title :
Direct comparison of 1300 nm GaInNAs lasers with GaAsN and GaAs barriers
Author :
Wei, Y.-Q. ; Wang, X.D. ; Modh, P. ; Hedekvist, P.O. ; Gu, Q.F. ; Sadeghi, M. ; Wang, S.M. ; Larsson, A.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same and the materials were grown in consecutive growth runs to minimize other differences
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor growth; stimulated emission; 1300 nm; GaAs barriers; GaAsN barriers; GaInNAs lasers; GaInNAs-GaAs; GaInNAs-GaAsN; emission wavelengths; material growth; quantum well; spectral gain characteristics; threshold currents; Current measurement; Electrons; Gain measurement; Gallium arsenide; Optical pulses; Photonics; Quantum well lasers; Threshold current; Waveguide lasers; Wavelength measurement;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Conference_Location :
Munich
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567192
