• DocumentCode
    2883054
  • Title

    Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 μm

  • Author

    Sandall, I.C. ; Walker, C.L. ; Smowton, P.M. ; Sellers, I.R. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., UK
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    20
  • Abstract
    This work examines the radiative and remaining nonradiative recombination processes in quantum dot lasers with low levels of defect related nonradiative recombination. The segmented contact method is used to obtain the spontaneous emission rate spectra of a 5-layer InAs/In0.15Ga0.85As DWELL structure at drive current densities between 22 and 490 Acm-2 taken at 300 K.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; spontaneous emission; 1.3 mum; 300 K; InAs lasers; InAs-In0.15Ga0.85As; InAs/In0.15Ga0.85As DWELL structure; defect related recombination; high growth temperature; nonradiative recombination; quantum dot lasers; radiative recombination; recombination processes; segmented contact method; spacer layers; spontaneous emission rate spectra; Astronomy; Current density; Gallium arsenide; Laser theory; Physics; Quantum dot lasers; Radiative recombination; Space technology; Temperature distribution; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference, 2005. EQEC '05. European
  • Print_ISBN
    0-7803-8973-5
  • Type

    conf

  • DOI
    10.1109/EQEC.2005.1567193
  • Filename
    1567193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883054