Title :
A high density CMOS process
Author :
Luscher, R. ; De Zaldivar, J.
Author_Institution :
Faselec AG/Philips, Zurich, Switzerland
Abstract :
A 3μ CMOS process yielding circuit densities comparable to 1.5μ design rules will be reported. The procedure was used to construct an 8b microcomputer for telecom use: clock frequency was 20MHz at 9V; 50k transistors were placed in an area of 31mm2.
Keywords :
CMOS process; Circuit testing; MOS capacitors; Mesh generation; Oxidation; Production; Read only memory; Secondary generated hot electron injection; Silicon; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156860
