DocumentCode
2883338
Title
Optical properties of AlGaN/GaN and ZnMgO/ZnO quantum wells
Author
Seo, Woon-Ho
Author_Institution
Digital Printing Div., Samsung Electron. Co., Ltd., Suwon, South Korea
fYear
2005
fDate
12-17 June 2005
Firstpage
39
Abstract
By the development of crystal growth technology, various kinds of semiconductor materials are used to realize the photonic devices of wide wavelength ranges. This article discusses the optical properties of AlGaN/GaN and ZnMgO/ZnO quantum wells for an application of short-wavelength lasers theoretically.
Keywords
II-VI semiconductors; III-V semiconductors; aluminium compounds; gallium compounds; magnesium compounds; optical materials; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; AlGaN-GaN; ZnMgO-ZnO; crystal growth technology; optical properties; photonic devices; quantum wells; semiconductor materials; short-wavelength lasers; Aluminum gallium nitride; Gallium nitride; Laser applications; Laser theory; Photonic crystals; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN
0-7803-8973-5
Type
conf
DOI
10.1109/EQEC.2005.1567211
Filename
1567211
Link To Document