DocumentCode :
2883362
Title :
System Redundancy; A Means of Improving Process Variation Yield Degradation in Memory Arrays
Author :
Eltawil, Ahmed M. ; Kurdahi, Fadi J.
Author_Institution :
California Univ., Irvine, CA
fYear :
2006
fDate :
26-28 April 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper addresses the fact that memory yield is the dominant issue affecting overall yield in nano-scale devices. It illustrates that by treating yield as a system design parameter, tremendous gains in effective chip yield can be achieved. The techniques outlined are especially suited for applications that have inherent system redundancy such as wireless communication. In that context, the paper illustrates a that system redundancy can easily tolerate up to 1% bit errors in memory while meeting system specifications such as bit error rate (BER) metrics
Keywords :
integrated circuit yield; integrated memory circuits; redundancy; memory arrays; memory yield; nanoscale devices; process variation yield degradation; system design parameter; system redundancy; Application specific integrated circuits; Bit error rate; Circuit faults; Degradation; Error correction; Error correction codes; Nanoscale devices; Random access memory; Redundancy; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0179-8
Electronic_ISBN :
1-4244-0180-1
Type :
conf
DOI :
10.1109/VDAT.2006.258144
Filename :
4027516
Link To Document :
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