DocumentCode :
2883414
Title :
Design and simulation of self-aligned modulation doped AlGaAs/GaAs ICs
Author :
Shur, M. ; Tzu-Hung Chen ; Chong Hyun ; Jenkins, Phillip
Author_Institution :
University Of Minnesota, Minneapolis, MN, USA
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
264
Lastpage :
265
Abstract :
Device design and simulation techniques for optimizing the performance of MODFET ICs will be presented. Self-aligned ion-implanted MODFETs with transconductances up to 249mmhos/mm and ring oscillators with 17.6ps propagation delay have been fabricated.
Keywords :
Circuit noise; Circuit simulation; Delay; Driver circuits; Epitaxial layers; Gallium arsenide; HEMTs; Inverters; MODFET circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156868
Filename :
1156868
Link To Document :
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