DocumentCode :
2883436
Title :
Non-thermal emission from InGaAs quantum dots in a microcavity: A novel cavity-bottleneck effect
Author :
Wang, X.Y. ; Shih, C.K. ; Pershin, Y.V. ; Piermarocchi, C. ; Joshi, A. ; Ma, W.Q. ; Zhang, J.Y. ; Salamo, G.J. ; Xia, Min
Author_Institution :
Dept. of Phys., Univ. of Texas at Austin, Austin, TX
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We observed highly non-thermal features from the photoluminescence of InGaAs/GaAs quantum dots in a planar microcavity. The effect was interpreted in terms of the interplay of phonon relaxation and cavity-dependent excitonic radiative recombination.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; microcavities; phonons; photoluminescence; semiconductor quantum dots; InGaAs; cavity-bottleneck effect; cavity-dependent excitonic radiative recombination; nonthermal emission; phonon relaxation; photoluminescence; planar microcavities; semiconductor quantum dots; Excitons; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser theory; Microcavities; Physics; Quantum dots; Reflectivity; Vertical cavity surface emitting lasers; (300.6470) Semiconductor Spectroscopy; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628969
Filename :
4628969
Link To Document :
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