DocumentCode :
2883508
Title :
Ultrafast hole-burning in intersubband absorption lines of GaN/AlN superlattices
Author :
Wang, Z. ; Reiman, K. ; Woerner, M. ; Elsaesser, T. ; Baumann, E. ; Giorgetta, F.R. ; Hofstetter, D. ; Wu, H. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Femtosecond two-color pump-probe experiments on intersubband absorption spectra of electrons in a GaN/AlN superlattice show distinct spectral holes unraveling both the homogeneous broadening contribution and the underlying optical phonon progression.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical hole burning; semiconductor superlattices; wide band gap semiconductors; GaN-AlN; femtosecond two-color pump-probe; homogeneous broadening contribution; intersubband absorption lines; optical phonon progression; superlattices; ultrafast hole-burning; Absorption; Electron optics; Gallium nitride; Nonlinear optics; Optical coupling; Optical pulses; Optical pumping; Optical superlattices; Phonons; Ultrafast optics; (160.6000) Semiconductors, including MQW; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628973
Filename :
4628973
Link To Document :
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