Title :
A 2Gb/s silicon NMOS laser driver
Author :
Swartz, R. ; Voshchenkov, A. ; Chin, George ; Finegan, S. ; Lau, Mogens ; Morris, Milton ; Archer, V. ; Ko, Pat
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ, USA
Abstract :
A laser driver IC fabricated in a 1μm gate NMOS process will be reported. Intended for use in optical communications, it has been operated at 2 Gb/s and at output levels of 200mA without detectable data error.
Keywords :
Capacitance; Delay; Diodes; Driver circuits; MOS devices; MOSFETs; Semiconductor device packaging; Silicon; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1156875
