Title :
Electronic and optical properties of self-assembled InN/GaN quantum dots
Author :
Schumacher, S. ; Baer, N. ; Schulz, S. ; Gartner, P. ; Czycholl, G. ; Jahnke, F.
Author_Institution :
Inst. for Theor. Phys., Univ. of Bremen, Bremen
Abstract :
Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
Keywords :
III-V semiconductors; excitons; gallium compounds; indium compounds; semiconductor quantum dots; wide band gap semiconductors; InN-GaN; biexciton ground-states; dark exciton; electronic properties; multi-exciton spectra; optical properties; self-assembled quantum dots; tight-binding model; Atom optics; Atomic layer deposition; Charge carrier processes; Excitons; Gallium nitride; Optical microscopy; Quantum dots; Quantum mechanics; Stimulated emission; Visualization; (250.5230) Photoluminescence; (300.6470) Spectroscopy, semiconductors; (999.9999) Quantum dots;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628979
