DocumentCode
2883615
Title
Optimization of silicon Spreading-Resistance Temperature sensor
Author
Li, Bin ; Lai, P.T. ; Chan, C.L. ; Sin, J.K.O.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fYear
2000
fDate
2000
Firstpage
20
Lastpage
23
Abstract
The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n+ region and high substrate doping, the SRT sensor can function at temperatures up to 400°C at a low current of 2 mA
Keywords
elemental semiconductors; silicon; temperature sensors; 2 mA; 400 C; Si; design optimization; maximum operating temperature; resistance-temperature characteristics; semiconductor processing; silicon spreading resistance temperature sensor; substrate doping; Appropriate technology; Contacts; Doping; Electrodes; Sensor phenomena and characterization; Silicon compounds; Silicon devices; Temperature sensors; Thermal resistance; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-6304-3
Type
conf
DOI
10.1109/HKEDM.2000.904207
Filename
904207
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