Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

Author

Cretu, B. ; Simoen, Eddy ; Routoure, J.-M. ; Carin, R. ; Aoulaiche, Marc ; Claeys, Cor

Author_Institution

GREYC, ENSICAEN, Caen, France

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency noise versus the temperature allows to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps.

Keywords

MOSFET; flicker noise; semiconductor device noise; semiconductor thin films; silicon; thin film transistors; Lorentzian components; back interfaces; carrier number fluctuation model; electrostatic coupling; flicker noise; front interfaces; low frequency noise characterization; n-channel UTBOX devices; noise spectra; size 6 nm; thin silicon film thickness; trap identification; ultra-thin buried oxide devices; Films; Fluctuations; Logic gates; Noise; Noise level; Noise measurement; Silicon; Lorentzian noise; UTBOX; carrier number fluctuation noise; low frequency noise; thin silicon film;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578877

Filename

6578877