Title :
Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film
Author :
Cretu, B. ; Simoen, Eddy ; Routoure, J.-M. ; Carin, R. ; Aoulaiche, Marc ; Claeys, Cor
Author_Institution :
GREYC, ENSICAEN, Caen, France
Abstract :
The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency noise versus the temperature allows to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps.
Keywords :
MOSFET; flicker noise; semiconductor device noise; semiconductor thin films; silicon; thin film transistors; Lorentzian components; back interfaces; carrier number fluctuation model; electrostatic coupling; flicker noise; front interfaces; low frequency noise characterization; n-channel UTBOX devices; noise spectra; size 6 nm; thin silicon film thickness; trap identification; ultra-thin buried oxide devices; Films; Fluctuations; Logic gates; Noise; Noise level; Noise measurement; Silicon; Lorentzian noise; UTBOX; carrier number fluctuation noise; low frequency noise; thin silicon film;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578877
