Title :
Noise in terahertz detectors based on semiconductor nanochannels
Author :
Millithaler, Jean-Francois ; Iniguez-de-la-Torre, I. ; Gonzalez, Temoatzin ; Mateos, Javier ; Sangare, Paul ; Ducournau, Guillaume ; Gaquiere, Christopher
Author_Institution :
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
By means of Monte Carlo simulations, we calculate (and compare with experimental results) the Noise Equivalent Power (NEP) in AlGaN/GaN-based submicron self-switching diodes at zero bias and provide guides for detection optimization in terms of number of devices and geometry (width and length of the channel). We also calculate the NEP under biased conditions.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; optimisation; semiconductor diodes; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; Monte Carlo simulations; NEP; detection optimization; noise equivalent power; semiconductor nanochannels; submicron self-switching diodes; terahertz detectors; Detectors; Noise; Power capacitors; Resistance; Schottky diodes; Surface impedance; SSD; Terahertz devices; detector;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578885
