Title :
TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing
Author :
Yuen, C.Y. ; Poon, M.C. ; Chan, M. ; Chan, W.Y. ; Qin, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Thin film transistors have been fabricated on the polysilicon from the process of metal induced lateral crystallization and pulsed rapid thermal annealing. The result shows that process of 10 cycles of 1 second at 800°C thermal pulse annealing has enhanced the grain sizes and the transistors fabricated have improvement which almost doubled the performance of those without the rapid thermal annealing. This method has high potential for use in the fabrication of thin film transistors on low temperature glass substrate and application in solar cell and LCD
Keywords :
crystallisation; elemental semiconductors; grain size; rapid thermal annealing; silicon; thin film transistors; 800 C; Si; fabrication; grain size; metal induced lateral crystallization; polysilicon thin film transistor; pulsed rapid thermal annealing; Crystallization; Fabrication; Glass; Grain size; Photovoltaic cells; Rapid thermal annealing; Rapid thermal processing; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904219
