Title :
Effects of electric and magnetic fields on electrons in a GaAs quantum box
Author :
Chakraborty, Haitali ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
An attempt is made to investigate theoretically the effect of electric and magnetic fields on an n-GaAs semiconductor quantum box. The magnitude of energy shift due to the electric or magnetic field increases with the field strength. The shift is also more pronounced for larger box dimensions
Keywords :
III-V semiconductors; gallium arsenide; semiconductor quantum dots; GaAs; electric field; electron energy level; magnetic field; n-GaAs semiconductor quantum box; Electrons; Energy states; Gallium arsenide; Magnetic confinement; Magnetic fields; Nanofabrication; Perturbation methods; Power engineering and energy; Quantum dots; Quantum mechanics;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904221
