Title :
On the reliability of SiGe microwave power heterojunction bipolar transistor
Author :
Zhang, Jinshu ; Tsien, Pei-Hsin ; Chen, Peiyi ; Nanver, L.K. ; Slotboom, J.W.
Author_Institution :
ECTM Group, Delft Univ. of Technol., Netherlands
Abstract :
Although the performance of SiGe heterojunction bipolar transistor has been improved much with the development of epitaxy technology, the reliability is a concern for practical application due to its large mismatch. We have carried out accelerated life test on the SiGe microwave power heterojunction bipolar transistor, and found that the performance of the SiGe microwave power HBT does not change after the HBT is addressed at peak junction temperature of 200°C for 168 hrs by forward DC bias. This clearly indicates that the SiGe HBT has the same reliability as Si bipolar transistor
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; life testing; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device reliability; semiconductor epitaxial layers; semiconductor materials; 200 C; SiGe; SiGe microwave power heterojunction bipolar transistor; accelerated life testing; epitaxial growth; lattice mismatch; reliability; Electronic ballasts; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Life estimation; Life testing; Microwave devices; Microwave technology; Silicon germanium; Temperature;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904223
