DocumentCode :
2883858
Title :
Effect of electric field on the energy levels of two interacting electrons in a quantum dot
Author :
Chakraborty, Chaitali ; Lai, P.T. ; Chakraborty, Supratic
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fYear :
2000
fDate :
2000
Firstpage :
94
Lastpage :
97
Abstract :
The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots
Keywords :
III-V semiconductors; gallium arsenide; perturbation theory; semiconductor quantum dots; GaAs; GaAs quantum dot; electric field; electronic energy level; parabolic confinement; perturbation method; Charge carrier processes; Electrons; Energy states; Gallium arsenide; Magnetic confinement; Magnetic fields; Perturbation methods; Quantum computing; Quantum dots; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
Type :
conf
DOI :
10.1109/HKEDM.2000.904224
Filename :
904224
Link To Document :
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