DocumentCode
2883858
Title
Effect of electric field on the energy levels of two interacting electrons in a quantum dot
Author
Chakraborty, Chaitali ; Lai, P.T. ; Chakraborty, Supratic
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fYear
2000
fDate
2000
Firstpage
94
Lastpage
97
Abstract
The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots
Keywords
III-V semiconductors; gallium arsenide; perturbation theory; semiconductor quantum dots; GaAs; GaAs quantum dot; electric field; electronic energy level; parabolic confinement; perturbation method; Charge carrier processes; Electrons; Energy states; Gallium arsenide; Magnetic confinement; Magnetic fields; Perturbation methods; Quantum computing; Quantum dots; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-6304-3
Type
conf
DOI
10.1109/HKEDM.2000.904224
Filename
904224
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