• DocumentCode
    2883858
  • Title

    Effect of electric field on the energy levels of two interacting electrons in a quantum dot

  • Author

    Chakraborty, Chaitali ; Lai, P.T. ; Chakraborty, Supratic

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots
  • Keywords
    III-V semiconductors; gallium arsenide; perturbation theory; semiconductor quantum dots; GaAs; GaAs quantum dot; electric field; electronic energy level; parabolic confinement; perturbation method; Charge carrier processes; Electrons; Energy states; Gallium arsenide; Magnetic confinement; Magnetic fields; Perturbation methods; Quantum computing; Quantum dots; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-6304-3
  • Type

    conf

  • DOI
    10.1109/HKEDM.2000.904224
  • Filename
    904224