• DocumentCode
    2883925
  • Title

    Interface properties of N2O-annealed SiO2/SiC system

  • Author

    Chakraborty, Supratic ; Lai, P.T. ; Chan, C.L. ; Cheng, Y.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    108
  • Lastpage
    111
  • Abstract
    The electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SiC interface and the oxide quality under high-field stress
  • Keywords
    MOS capacitors; annealing; interface states; interface structure; nitridation; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N2O; N2O-annealed SiO2/SiC system; SiO2-SiC; acceptor-type interface states; electrical properties; high-field stress; interface-state density; metal-oxide-semiconductor capacitors; oxide traps; stress measurements; Annealing; Capacitance-voltage characteristics; Epitaxial layers; Hafnium; MOS capacitors; Oxidation; Silicon carbide; Temperature; Thermal conductivity; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-6304-3
  • Type

    conf

  • DOI
    10.1109/HKEDM.2000.904227
  • Filename
    904227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883925