Title :
Interface properties of N2O-annealed SiO2/SiC system
Author :
Chakraborty, Supratic ; Lai, P.T. ; Chan, C.L. ; Cheng, Y.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
The electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SiC interface and the oxide quality under high-field stress
Keywords :
MOS capacitors; annealing; interface states; interface structure; nitridation; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N2O; N2O-annealed SiO2/SiC system; SiO2-SiC; acceptor-type interface states; electrical properties; high-field stress; interface-state density; metal-oxide-semiconductor capacitors; oxide traps; stress measurements; Annealing; Capacitance-voltage characteristics; Epitaxial layers; Hafnium; MOS capacitors; Oxidation; Silicon carbide; Temperature; Thermal conductivity; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904227
