Title :
Role of oxygen on the implantation related residual defects in silicon
Author :
Wen, Jianqing ; Evans-Freeman, Jan ; Peaker, A.R. ; Zhang, J.P. ; Hemment, P.L.F. ; Marsh, C.D. ; Booker, G.R.
Author_Institution :
Center for Electron. Mater., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations. Photoluminescence (PL) study showed a strong correlation between the D-line intensity and the oxygen concentration. Transmission electron microscopy (TEM) measurements also suggested the extended defects were more favored in the high oxygen sample. High frequency capacitance-voltage (C-V) measurements revealed excess acceptors that were further investigated by deep level transient spectroscopy (DLTS). A hole trap with activation energy of 450 meV was detected and was suggested to relate to agglomerations of point defects associated with more than one type of 3D-metal related deep levels
Keywords :
deep level transient spectroscopy; deep levels; elemental semiconductors; extended defects; ion implantation; oxygen; photoluminescence; point defects; rapid thermal annealing; silicon; transmission electron microscopy; 450 meV; O concentration; Si:O; TEM; activation energy; deep level transient spectroscopy; excess acceptors; hole trap; implantation related residual defects; photoluminescence; point defects agglomeration; rapid thermal annealed; transmission electron microscopy; Boron; Capacitance-voltage characteristics; Information technology; Nitrogen; Oxygen; Rapid thermal annealing; Silicon; Spectroscopy; Temperature measurement; Transmission electron microscopy;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904228
