Impact of Interstitial Carbon on Base Current Ideality in SiGe:C Heterojunction Bipolar Transistors

Author

Liu, J.P. ; Verma, P.R. ; Chu, S.F. ; Zhang, S.Q. ; Loh, W.B. ; Leong, K.C. ; Siew, H.L. ; Sohn, D.K. ; Hsia, L.C. ; Decoutere, Stefaan ; Xu, Mingwei ; Van Wichelen, K. ; Loo, Roger

Author_Institution

Chartered Semicond. Mfg Ltd., Singapore

fYear

2006

fDate

26-28 April 2006

Firstpage

1

Lastpage

2

Abstract

We show that the incorporation of interstitial C impacts the base current ideality in SiGe:C HBTs fabricated in 0.18mum SiGe BiCMOS process. SiGe:C epi layers with the same structural and processing parameters but with less interstitial C obtained by adjusting growth conditions have better base current ideality. It is observed that the interstitial C in the emitter/base depletion region, rather than that in the neutral base region, leads to the base current non-ideality. Optimization of C substitution and profile leads to less recombination as well as good B diffusion control thus good device performance

Keywords

BiCMOS integrated circuits; Ge-Si alloys; X-ray diffraction; carbon; chemical interdiffusion; heterojunction bipolar transistors; semiconductor epitaxial layers; 0.18 micron; BiCMOS process; SiGe:C; base current ideality; diffusion control; epitaxial layers; heterojunction bipolar transistors; interstitial carbon; neutral base region; BiCMOS integrated circuits; Epitaxial growth; Feedback amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Radiative recombination; Silicon germanium; Textile industry; Wood industry; X-ray scattering; BVceo; BiCMOS; HBT; SIMS; SiGe; SiGe:C; XRD; fT; fmax;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2006 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

1-4244-0179-8

Electronic_ISBN

1-4244-0180-1

Type

conf

DOI

10.1109/VDAT.2006.258181

Filename

4027553