A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application

Author

Chen, Jia-Liang ; Chiu, Tang-Jung ; Jou, Christina F.

Author_Institution

Inst. of Commun., Nat. Chiao Tung Univ., Hsinchu

fYear

2006

fDate

26-28 April 2006

Firstpage

1

Lastpage

2

Abstract

A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier

Keywords

BiCMOS integrated circuits; Bluetooth; Ge-Si alloys; UHF power amplifiers; integrated circuit design; 0.35 micron; 2.4 GHz; BiCMOS power amplifier; BiCMOS process; Bluetooth application; Bluetooth frequency band; SiGe; class F power amplifier; power added efficiency; BiCMOS integrated circuits; Bluetooth; Circuit optimization; Flexible printed circuits; Germanium silicon alloys; High power amplifiers; Impedance matching; Power amplifiers; Power measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2006 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

1-4244-0179-8

Electronic_ISBN

1-4244-0180-1

Type

conf

DOI

10.1109/VDAT.2006.258183

Filename

4027555