Title :
A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application
Author :
Chen, Jia-Liang ; Chiu, Tang-Jung ; Jou, Christina F.
Author_Institution :
Inst. of Commun., Nat. Chiao Tung Univ., Hsinchu
Abstract :
A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier
Keywords :
BiCMOS integrated circuits; Bluetooth; Ge-Si alloys; UHF power amplifiers; integrated circuit design; 0.35 micron; 2.4 GHz; BiCMOS power amplifier; BiCMOS process; Bluetooth application; Bluetooth frequency band; SiGe; class F power amplifier; power added efficiency; BiCMOS integrated circuits; Bluetooth; Circuit optimization; Flexible printed circuits; Germanium silicon alloys; High power amplifiers; Impedance matching; Power amplifiers; Power measurement; Silicon germanium;
Conference_Titel :
VLSI Design, Automation and Test, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0179-8
Electronic_ISBN :
1-4244-0180-1
DOI :
10.1109/VDAT.2006.258183
