• DocumentCode
    2884011
  • Title

    A dual-port 65ns 64K × 4 DRAM with a 50MHz serial output

  • Author

    Whiteside, F. ; Mozden, T. ; Sittig, R.

  • Author_Institution
    Mostek Corp., Carrollton, TX, USA
  • Volume
    XXIX
  • fYear
    1986
  • fDate
    19-21 Feb. 1986
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    A DRAM featuring 256×4 serial output at 50MHz and row / column redundancy will be described. Using a cell-plate driver the entire matrix amy be written in 256 flash-write cycles.
  • Keywords
    Capacitors; Laser modes; MOS devices; Noise figure; Noise measurement; Random access memory; Redundancy; Registers; Signal restoration; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
  • Conference_Location
    Anaheim, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1986.1156899
  • Filename
    1156899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2884011