Title :
Study on the characteristics for deep-sub-micron grooved-gate PMOSFET
Author :
Ren, Hongxia ; Yue, Hao
Author_Institution :
Inst. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution
Keywords :
MOSFET; hot carriers; semiconductor device models; surface potential; 2D device simulator; MEDICI; deep-sub-micron grooved-gate PMOSFET; hot carriers; hydrodynamic energy transport model; surface potential; Degradation; Doping; Electric variables; Hot carriers; Hydrodynamics; MOSFET circuits; Medical simulation; Microelectronics; Poisson equations; Silicon devices;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904234
