International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

fYear

2000

fDate

10-13 Dec. 2000

Abstract

Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.

Keywords

CMOS integrated circuits; DRAM chips; MOSFET; electric sensing devices; elemental semiconductors; high-speed integrated circuits; integrated circuit interconnections; integrated circuit manufacture; integrated circuit modelling; integrated circuit technology; nanotechnology; silicon; thin film transistors; 3D IC; CMOS devices; DRAM; FEOL technology; IC manufacture; MOSFE; Si; Si TFT; analogue RF IC; atomic scale effects; biochemical sensors; compact modelling; displays; gate dielectrics; high speed compound semiconductor devices; hot carrier; interconnect technology; memory technologies; mixed signal devices; modelling; nanoelectronics; organic electronic; power device technology; simulation; thin oxides breakdown; transport modelling; wireless technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904244

Filename

904244