Title :
Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition
Author :
Yamaguchi, T. ; Satake, H. ; Fukushima, N. ; Toriumi, A.
Author_Institution :
Lab. of Adv. LSI Technol., Toshiba Corp., Yokohama, Japan
Abstract :
On the basis of the experimental results of XPS analysis and the carrier separation, the band diagram and carrier transport mechanism in ZrO/sub 2/ dielectrics were clarified for the first time. ZrO/sub 2/-MIS structure consists of ZrO/sub 2/ layer and the interfacial Zr-silicate layer. The carrier conduction in ZrO/sub 2/ layer is dominant in the ZrO/sub 2//Zr-silicate/Si MIS structure. It was found that the hole conduction mechanism is different from electron conduction mechanism in ZrO/sub 2/ gate dielectrics.
Keywords :
MIS structures; MISFET; X-ray photoelectron spectra; band structure; carrier mobility; dielectric thin films; elemental semiconductors; pulsed laser deposition; silicon; zirconium compounds; MIS structure; XPS analysis; ZrO/sub 2/-ZrSiO/sub 4/-Si; band diagram; carrier conduction mechanism; carrier separation; electron conduction mechanism; gate dielectrics; hole conduction mechanism; pulsed-laser-ablation deposition; Artificial intelligence; Capacitance-voltage characteristics; Capacitors; Charge carrier processes; Dielectric constant; Dielectric measurements; Electrodes; High K dielectric materials; High-K gate dielectrics; Substrates;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904249
