Title :
Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
Author :
Manchanda, L. ; Green, M.L. ; van Dover, R.B. ; Morris, M.D. ; Kerber, A. ; Hu, Y. ; Han, J.-P. ; Silverman, P.J. ; Sorsch, T.W. ; Weber, G. ; Donnelly, V. ; Pelhos, K. ; Klemens, F. ; Ciampa, N.A. ; Kornblit, A. ; Kim, Y.O. ; Bower, J.E. ; Barr, D. ; Fer
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
We have investigated a new class of high K gate dielectric materials, Si-doped aluminates. These dielectrics, with TiN gates, can withstand high temperature CMOS processing and therefore do not require replacement gate technology. In this paper we focus on Si-doped zirconium aluminate (Zr-Al-Si-O), with K/spl sim/20. With the TiN gate stack subjected to the standard CMOS thermal budget, we have scaled this dielectric to t/sub eq//spl sim/1.2 nm with leakage current <50 mA/cm/sup 2/ and gate power budget <50 mW/cm/sup 2/, at IV. For high performance, low power CMOS, beyond SiO/sub 2/, doped-aluminum oxide (with K/spl sim/10) may be a viable alternate gate dielectric. Beyond aluminum oxide, aluminates (with K>15) may be viable alternate gate dielectrics.
Keywords :
CMOS integrated circuits; dielectric thin films; leakage currents; low-power electronics; zirconium compounds; 1 V; 1.2 nm; ZrAlSiO; gate dielectric; gate power budget; gate stack; high temperature metal-gate CMOS; leakage current; low power applications; Aluminum oxide; CMOS process; CMOS technology; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Leakage current; Temperature; Tin; Zirconium;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904250
