DocumentCode :
2884277
Title :
Optical characterization of Cu2ZnSnS4 thin films prepared by non-vacuum process for photodetector application
Author :
Chatterjee, Uddipta ; Duttagupta, Siddhartha P. ; Gandhi, Mayuri N.
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai-400076, India
fYear :
2012
fDate :
7-10 March 2012
Firstpage :
92
Lastpage :
95
Abstract :
Cu2ZnSnS4 (CZTS) thin films have been successfully deposited by non-vacuum, sol-gel process on Molybdenum (Mo) coated Soda Lime Glass (SLG) substrate. The Cu, Zn, and Sn liquid precursor ratios have been pre-determined so as to achieve a Cu poor (23%) and Zn (14%) rich film with a goal to optimize absorber performance. A thermal annealing step (500°C, 60min) was performed in order to facilitate sulfurization from H2S source. The structural properties of CZTS film are determined by X-Ray Diffraction and Raman spectroscopy. We have confirmed deposition of a polycrystalline single phase (kesterite) CZTS thin film. Photoluminescence studies have been performed using an Yb:SYS laser at 534 nm and spanning room temperature (300K) and low temperature (8K) regimes in order to determine the optical band gap of the optimized CZTS absorber layer (1.24eV).
Keywords :
CZTS thin film; non-vacuum process; photo detector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location :
Pune, India
Print_ISBN :
978-1-4673-1040-6
Type :
conf
DOI :
10.1109/ISPTS.2012.6260888
Filename :
6260888
Link To Document :
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