• DocumentCode
    2884277
  • Title

    Optical characterization of Cu2ZnSnS4 thin films prepared by non-vacuum process for photodetector application

  • Author

    Chatterjee, Uddipta ; Duttagupta, Siddhartha P. ; Gandhi, Mayuri N.

  • Author_Institution
    Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai-400076, India
  • fYear
    2012
  • fDate
    7-10 March 2012
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    Cu2ZnSnS4 (CZTS) thin films have been successfully deposited by non-vacuum, sol-gel process on Molybdenum (Mo) coated Soda Lime Glass (SLG) substrate. The Cu, Zn, and Sn liquid precursor ratios have been pre-determined so as to achieve a Cu poor (23%) and Zn (14%) rich film with a goal to optimize absorber performance. A thermal annealing step (500°C, 60min) was performed in order to facilitate sulfurization from H2S source. The structural properties of CZTS film are determined by X-Ray Diffraction and Raman spectroscopy. We have confirmed deposition of a polycrystalline single phase (kesterite) CZTS thin film. Photoluminescence studies have been performed using an Yb:SYS laser at 534 nm and spanning room temperature (300K) and low temperature (8K) regimes in order to determine the optical band gap of the optimized CZTS absorber layer (1.24eV).
  • Keywords
    CZTS thin film; non-vacuum process; photo detector;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
  • Conference_Location
    Pune, India
  • Print_ISBN
    978-1-4673-1040-6
  • Type

    conf

  • DOI
    10.1109/ISPTS.2012.6260888
  • Filename
    6260888