DocumentCode
2884277
Title
Optical characterization of Cu2 ZnSnS4 thin films prepared by non-vacuum process for photodetector application
Author
Chatterjee, Uddipta ; Duttagupta, Siddhartha P. ; Gandhi, Mayuri N.
Author_Institution
Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai-400076, India
fYear
2012
fDate
7-10 March 2012
Firstpage
92
Lastpage
95
Abstract
Cu2 ZnSnS4 (CZTS) thin films have been successfully deposited by non-vacuum, sol-gel process on Molybdenum (Mo) coated Soda Lime Glass (SLG) substrate. The Cu, Zn, and Sn liquid precursor ratios have been pre-determined so as to achieve a Cu poor (23%) and Zn (14%) rich film with a goal to optimize absorber performance. A thermal annealing step (500°C, 60min) was performed in order to facilitate sulfurization from H2 S source. The structural properties of CZTS film are determined by X-Ray Diffraction and Raman spectroscopy. We have confirmed deposition of a polycrystalline single phase (kesterite) CZTS thin film. Photoluminescence studies have been performed using an Yb:SYS laser at 534 nm and spanning room temperature (300K) and low temperature (8K) regimes in order to determine the optical band gap of the optimized CZTS absorber layer (1.24eV).
Keywords
CZTS thin film; non-vacuum process; photo detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location
Pune, India
Print_ISBN
978-1-4673-1040-6
Type
conf
DOI
10.1109/ISPTS.2012.6260888
Filename
6260888
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