Title :
Temperature dependence of avalanche multiplication in spiked electric fields
Author :
van den Berg, M.R. ; Nanver, L.K. ; Slotboom, J.W.
Author_Institution :
DIMES-ECTM, Delft Univ. of Technol., Netherlands
Abstract :
The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.
Keywords :
avalanche breakdown; elemental semiconductors; impact ionisation; p-n junctions; silicon; Si; avalanche multiplication; charge carrier transport; electric field spike; energy relaxation length; gate oxide; impact ionization; p-n junction; silicon; temperature dependence; Bipolar transistors; Charge carriers; Current measurement; Doping profiles; Electrons; Impact ionization; MOSFETs; Silicon; Temperature dependence; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904263
