Title :
Control of nuclear spin in InGaAs quantum dots
Author :
Makhonin, M.N. ; Tartakovskii, A.I. ; Wright, T. ; Pulizzi, F. ; Skiba-Szymanska, J. ; Skolnick, M.S. ; Fal, V.I. ; Fry, P.W. ; Tahraoui, A. ; Ng, W.K. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield
Abstract :
Control of the dynamic nuclear polarization is achieved in individual InGaAs dots embedded in a p-i-n diode by employing the vertical electric field controlling carrier tunneling rates. Nuclear magnetic fields up to 1.7 T are observed.
Keywords :
III-V semiconductors; Zeeman effect; gallium arsenide; indium compounds; nuclear polarisation; photoconductivity; photoemission; photoluminescence; semiconductor quantum dots; spin polarised transport; tunnelling; InGaAs; InGaAs quantum dots; carrier tunneling; dynamic nuclear polarization; electron Zeeman splitting; nuclear magnetic fields; nuclear spin; p-i-n diode; photocurrent; photoluminescence; spin-polarized electrons; Electrons; Flip-flops; Indium gallium arsenide; Laser excitation; Magnetic field measurement; Photoluminescence; Physics; Polarization; Quantum dots; Tunneling; (250.5230) Photoluminescence; (300.6250) Spectroscopy, condensed matter;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4629031
