Non-linear modelling of the NE67383 MESFET

Author

Lund, Trevor ; Chan, Christopher

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

fYear

1991

fDate

16-17 Jun 1991

Firstpage

196

Abstract

The allowance for non-linear effects in the design of high frequency circuits has so far been relegated to the empirical domain, or has required the use of very expensive software, or software developed within certain institutions and not commercially available. Recently a low cost package (C/NL) has been released for the analysis and optimisation of non-linear microwave circuits, making use of a personal computer. In this paper the authors report on an investigation of the usefulness and reliability of this program. They have measured the S-parameters of a MESFET over the range from 1 GHz to 10 GHz, and at a variety of bias values, and have tried using C/NL and other software to fit a model to these data. In C/NL use has been made of the non-linear model thus generated to predict the gain compression, intermodulation and harmonic distortion parameters. The results have been compared with measured parameters

Keywords

S-parameters; Schottky gate field effect transistors; electric distortion; electronic engineering computing; intermodulation; semiconductor device models; solid-state microwave devices; 1 to 10 GHz; MESFET; NE67383; S-parameters; gain compression; harmonic distortion parameters; intermodulation; low cost package; non-linear microwave circuits; nonlinear circuits; nonlinear model; parameter extraction; personal computer; reliability; Cost function; Frequency; MESFETs; Microcomputers; Microwave circuits; Packaging; Predictive models; Scattering parameters; Software measurement; VHF circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991. Conference Proceedings, China., 1991 International Conference on

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/CICCAS.1991.184317

Filename

184317