Title :
A 25ns 256K CMOS SRAM
Author :
Honda, Masakazu ; Kondou, K. ; Mitani, Hitoshi ; Kimura, Tomohiro ; Koshimaru, S. ; Nagahashi, Y. ; Tameda, M.
Author_Institution :
NEC Memory Products Division, Kawasaki, Japan
Keywords :
Aluminum; CMOS process; Circuits; Delay lines; Electrons; Planarization; Random access memory; Read-write memory; Signal processing; Surface resistance;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1156929
