DocumentCode
2884559
Title
Enhanced secondary electron injection in novel SiGe flash memory devices
Author
Kencke, D.L. ; Xin Wang ; Ouyang, Q. ; Mudanai, S. ; Tasch, A., Jr. ; Banerjee, S.K.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
105
Lastpage
108
Abstract
The property of SiGe layers to control channel-initiated secondary electron (CHISEL) gate current is explored for the first time using 2-D Monte Carlo simulation. Novel planar and vertical SiGe flash memory cells show a 4/spl times/ enhancement in CHISEL injection, with up to 93% of gate electrons generated in SiGe layers.
Keywords
Ge-Si alloys; Monte Carlo methods; flash memories; semiconductor materials; 2D Monte Carlo simulation; CHISEL injection; SiGe; SiGe flash memory device; channel initiated secondary electron gate current; planar cell; vertical cell; Acoustic scattering; Channel hot electron injection; Flash memory; Germanium silicon alloys; Impact ionization; Optical scattering; Phonons; Scattering parameters; Silicon germanium; Substrate hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904269
Filename
904269
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